Title :
TF004 - interfacing complex oxides to gallium nitride
Author :
Losego, M.D. ; Craft, H.S. ; Mita, S. ; Rice, T. ; Collazo, R. ; Sitar, Z. ; Maria, J-P.
Author_Institution :
Department of Materials Science and Engineering, North Carolina State University, Research Building 1, 1001 Capability Drive, Raleigh, 27606 USA
Abstract :
Integration of functional complex oxides with gallium nitride is attractive for advanced device architectures including smart FETs and high-temperature electronics. Inclusion of large bandgap interfacial oxide layers are of interest for band line-up compatibility. This presentation reviews work on the epitaxial growth of large bandgap rocksalt oxide buffer layers including MgO and CaO by molecular beam epitaxy. It also discusses the epitaxial deposition of ferroelectric oxides by rf magnetron sputtering.
Keywords :
Binary search trees; FETs; Ferroelectric materials; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Monitoring; Photonic band gap; Substrates; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693846
