• DocumentCode
    1607198
  • Title

    Nitride Engineering for Improved Erase Performance and Retention of TANOS NAND Flash Memory

  • Author

    Van den Bosch, G. ; Furnémont, A. ; Zahid, M.B. ; Degraeve, R. ; Breuil, L. ; Cacciato, A. ; Rothschild, A. ; Olsen, C. ; Ganguly, U. ; Houdt, J. Van

  • Author_Institution
    IMEC, Leuven
  • fYear
    2008
  • Firstpage
    128
  • Lastpage
    129
  • Abstract
    TANOS charge trap flash (CTF) with Al2O3-Si3N4-SiO2 memory stack and TaN metal gate is a candidate technology to replace conventional floating gate technology for multi-level NAND applications beyond the 32nm node. The main drawbacks of TANOS to date are poor erase performance (in terms of speed and/or saturated level) as well as insufficient retention in the highest programmed state.
  • Keywords
    NAND circuits; aluminium compounds; flash memories; Al2O3-Si3N4-SiO2; NAND flash memory; TANOS charge trap flash; erase performance; erase retention; memory stack; metal gate; nitride engineering; Aluminum oxide; Channel bank filters; Charge pumps; Electron traps; Inorganic materials; Nonvolatile memory; Power engineering and energy; Silicon compounds; Tunneling; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
  • Conference_Location
    Opio
  • Print_ISBN
    978-1-4244-1546-5
  • Electronic_ISBN
    978-1-4244-1547-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2008.45
  • Filename
    4531845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1607198