Title :
Nitride Engineering for Improved Erase Performance and Retention of TANOS NAND Flash Memory
Author :
Van den Bosch, G. ; Furnémont, A. ; Zahid, M.B. ; Degraeve, R. ; Breuil, L. ; Cacciato, A. ; Rothschild, A. ; Olsen, C. ; Ganguly, U. ; Houdt, J. Van
Author_Institution :
IMEC, Leuven
Abstract :
TANOS charge trap flash (CTF) with Al2O3-Si3N4-SiO2 memory stack and TaN metal gate is a candidate technology to replace conventional floating gate technology for multi-level NAND applications beyond the 32nm node. The main drawbacks of TANOS to date are poor erase performance (in terms of speed and/or saturated level) as well as insufficient retention in the highest programmed state.
Keywords :
NAND circuits; aluminium compounds; flash memories; Al2O3-Si3N4-SiO2; NAND flash memory; TANOS charge trap flash; erase performance; erase retention; memory stack; metal gate; nitride engineering; Aluminum oxide; Channel bank filters; Charge pumps; Electron traps; Inorganic materials; Nonvolatile memory; Power engineering and energy; Silicon compounds; Tunneling; Water;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location :
Opio
Print_ISBN :
978-1-4244-1546-5
Electronic_ISBN :
978-1-4244-1547-2
DOI :
10.1109/NVSMW.2008.45
