DocumentCode :
1607413
Title :
Fabrication of (Ba,Sr)TiO3 high-value integrated capacitors by chemical solution deposition
Author :
Sigman, Jennifer ; Clem, Paul G. ; Brennecka, GeoffL ; Tuttle, Bruce A.
Author_Institution :
Sandia National Laboratories, Albuquerque, NM 87123, USA
Volume :
3
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
This report focuses on our recent advances in the fabrication and processing of barium strontium titanate (BST) thin films by chemical solution depositiion for next generation fuctional integrated capacitors. Projected trends for capacitors include increasing capacitance density, decreasing operating voltages, decreasing dielectric thickness and decreased process cost. Key to all these trends is the strong correlation of film phase evolution and resulting microstructure, it becomes possible to tailor the microstructure for specific applications. This interplay will be discussed in relation to the resulting temperature dependent dielectric response of the BST films.
Keywords :
Barium; Binary search trees; Capacitors; Chemicals; Dielectric thin films; Fabrication; Microstructure; Sputtering; Strontium; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2008.4693856
Filename :
4693856
Link To Document :
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