PNP bipolar magnetotransistor for sensor application

The authors have studied a variety of structures and operating conditions of PNP lateral dual collector magnetotransistors with suppressed sidewall injection, fabricated using a standard bipolar IC process. The measured relative sensitivities are as high as 150%/T if the substrate is connected to the most negative potential. The high substrate current inherent in these devices has to be reduced. Various device geometries have been considered and designed in order to keep sufficient relative sensitivity of the device while decreasing the substrate current.<>