Title :
Applications of intense pulsed light ion beams to materials science
Author :
Yatsui, K. ; Jiang, W. ; Harada, N. ; Sonegawa, T.
Author_Institution :
Lab. of Beam Technol., Nagaoka Univ. of Technol., Niigata, Japan
fDate :
6/20/1905 12:00:00 AM
Abstract :
By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science
Keywords :
focused ion beam technology; fullerenes; ion beam effects; powder technology; thin films; back side deposition; film quality; foil acceleration; front side deposition; high density ablation plasma; intense pulsed light ion beams; ion beam ablation plasma; ion beam evaporation; nanosize powders; rapid cooling; Cooling; Identity-based encryption; Ion beams; Materials science and technology; Plasma applications; Plasma density; Plasma materials processing; Substrates; Transistors; Zinc compounds;
Conference_Titel :
High-Power Particle Beams, 1998. BEAMS '98. Proceedings of the 12th International Conference on
Conference_Location :
Haifa
Print_ISBN :
0-7803-4287-9
DOI :
10.1109/BEAMS.1998.822398
