Title :
High quality oxide thin film depositions using a sol-gel method
Author :
Uchiyama, K. ; Fukunaga, D. ; Fujii, T. ; Shiosaki, T.
Author_Institution :
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama-cho 8916-5, Ikoma, 630-0192, JAPAN
Abstract :
High quality lanthanum-modified lead zirconate titanate (PLZT) and strontium titanate (STO) thin films were deposited on sapphire substrates using an advanced sol-gel method. This new deposition technique brought high quality epitaxial growth of PLZT thin films on r-cut sapphire and STO thin films on c-cut sapphires. The PLZT film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. In turn, doped STO thin films showed less conductivity compared to that of bulk. This may come from the existence of the grain boundaries in the STO thin films. Further improvement is under investigation in order to achieve higher conductivity of the STO thin films
Keywords :
Conductivity; Crystallization; Electrooptic devices; Electrooptic modulators; Scanning electron microscopy; Sputtering; Substrates; Titanium compounds; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2008.4693864