Thin film deposition by pulsed ion beam evaporation

Author

Jiang, W. ; Ohtomo, K. ; Igarashi, M. ; Yatsui, K.

Author_Institution

Lab. of Beam Technol., Nagaoka Univ. of Technol., Niigata, Japan

Volume

1

fYear

1998

fDate

6/20/1905 12:00:00 AM

Firstpage

121

Abstract

Thin films of (Ba,Sr)TiO₃ (BST) and SiC were obtained by using the technology of intense, pulsed ion beam evaporation (IBE). The IBE takes advantage of high-temperature, high-density nature of the ablation plasmas generated by intense, pulsed ion beam. As a result, the thin films obtained by IBE are characterized by many special properties that can not be obtained by other thin-film deposition technologies. In this paper, we report the analytical results obtained by X-ray diffraction (XRD) and scanning electron microscope (SEM). In addition, the BST samples were analyzed by using the Sawyer-Tower circuit for dielectric constant measurement and the SiC samples were analyzed by the scratch test measurement

Keywords

X-ray diffraction; barium compounds; ion beam assisted deposition; scanning electron microscopy; silicon compounds; strontium compounds; thin films; (BaSr)TiO₃; Sawyer-Tower circuit; SiC; X-ray diffraction; ablation plasmas; dielectric constant measurement; pulsed ion beam evaporation; scanning electron microscope; scratch test measurement; thin film deposition; Binary search trees; Circuit testing; Dielectric measurements; Identity-based encryption; Ion beams; Scanning electron microscopy; Silicon carbide; Sputtering; Thin film circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Power Particle Beams, 1998. BEAMS '98. Proceedings of the 12th International Conference on

Conference_Location

Haifa

Print_ISBN

0-7803-4287-9

Type

conf

DOI

10.1109/BEAMS.1998.822400

Filename

822400