Title :
Thin film deposition by pulsed ion beam evaporation
Author :
Jiang, W. ; Ohtomo, K. ; Igarashi, M. ; Yatsui, K.
Author_Institution :
Lab. of Beam Technol., Nagaoka Univ. of Technol., Niigata, Japan
fDate :
6/20/1905 12:00:00 AM
Abstract :
Thin films of (Ba,Sr)TiO3 (BST) and SiC were obtained by using the technology of intense, pulsed ion beam evaporation (IBE). The IBE takes advantage of high-temperature, high-density nature of the ablation plasmas generated by intense, pulsed ion beam. As a result, the thin films obtained by IBE are characterized by many special properties that can not be obtained by other thin-film deposition technologies. In this paper, we report the analytical results obtained by X-ray diffraction (XRD) and scanning electron microscope (SEM). In addition, the BST samples were analyzed by using the Sawyer-Tower circuit for dielectric constant measurement and the SiC samples were analyzed by the scratch test measurement
Keywords :
X-ray diffraction; barium compounds; ion beam assisted deposition; scanning electron microscopy; silicon compounds; strontium compounds; thin films; (BaSr)TiO3; Sawyer-Tower circuit; SiC; X-ray diffraction; ablation plasmas; dielectric constant measurement; pulsed ion beam evaporation; scanning electron microscope; scratch test measurement; thin film deposition; Binary search trees; Circuit testing; Dielectric measurements; Identity-based encryption; Ion beams; Scanning electron microscopy; Silicon carbide; Sputtering; Thin film circuits; Transistors;
Conference_Titel :
High-Power Particle Beams, 1998. BEAMS '98. Proceedings of the 12th International Conference on
Conference_Location :
Haifa
Print_ISBN :
0-7803-4287-9
DOI :
10.1109/BEAMS.1998.822400
