DocumentCode :
1607643
Title :
Development of PLZT films on base-metal foils by chemical solution deposition
Author :
Ma, B. ; Kwon, D.K. ; Narayanan, M. ; Balachandran, U.
Author_Institution :
Energy Systems Division, Argonne National Laboratory, IL 60439, USA
Volume :
3
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
Thin films of Pb0.92La0.08Zr0.52Ti0.48O3 were deposited on Ni foils by chemical solution deposition to form film-on-foil capacitors with high dielectric constant. These capacitors can be embedded into printed wire boards. We measured dielectric constants of 1300 (at 25??C) and 1800 (at 150??C), as well as leakage current densities ??6.6 ?? 10??9 (at 25??C) and 1.4 ?? 10-8 A/cm2 (at 150??C), breakdown field strength >1.4 MV/cm, and energy density of 16.5 J/cm3.
Keywords :
Capacitors; Chemicals; Current measurement; Density measurement; Dielectric measurements; Dielectric thin films; Energy measurement; High-K gate dielectrics; Sputtering; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2008.4693866
Filename :
4693866
Link To Document :
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