Title :
Design and on-chip measurement of CMOS infrared frequency-selective-surface absorbers for thermoelectric energy harvesting
Author :
Su, Li ; Yang, Sin Han ; Huang, I. Chun ; Tzuang, Ching-Kuang C.
Author_Institution :
Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A high-efficiency stacked-film infrared absorber comprising a Jerusalem-cross slot frequency-selective surface (FSS) and Si-based dielectric layers fabricated in foundry CMOS process is proposed. Simulation shows that integration of proposed FSSs with dielectric layers can improve the absorption of the dielectric layers in infrared. A temperature sensing circuit is integrated in CMOS chip to measure the absorption behaviors. The measurement results at 28.3 THz show good trends with simulation. The chip temperature of the FSS-integrated absorber is 7.3% higher than dielectric stacks. The design can be applied for absorbers of CMOS thermoelectric energy harvesters without extra cost.
Keywords :
CMOS integrated circuits; energy harvesting; frequency selective surfaces; integrated circuit design; submillimetre wave integrated circuits; surge protection; temperature sensors; thermoelectric devices; CMOS infrared frequency- selective-surface integrated absorber; CMOS thermoelectric energy harvester; Jerusalem-cross slot FSS; Jerusalem-cross slot frequency-selective surface; dielectric layer fabrication; dielectric layers absorption; dielectric stack; foundry CMOS processing; frequency 28.3 THz; high-efficiency stacked-film infrared absorber; on-chip measurement; temperature sensing circuit; CMOS integrated circuits; Dielectric measurements; Dielectrics; Frequency selective surfaces; Metals; Semiconductor device measurement; Temperature measurement; CMOS integrated circuits; energy harvesting; frequency-selective surfaces; infrared;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
