DocumentCode
1607739
Title
Device challenges and opportunities
Author
Hu, Chenming
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear
2004
Firstpage
4
Lastpage
5
Abstract
CMOS technology is facing exciting opportunities and formidable challenges. They include mobility scaling to overcome the speed/power barrier, new gate-stack materials and/or new device structures; to overcome the gate-length/leakage barrier; nonvolatile memory and universal memory to enlarge the market, and containment of costs. CMOS has much more to give in the next two decades, yet it is not too early, especially in universities, to start searching for not-CMOS-like circuit/system architectures that may require non-existing new devices but offer the promise of dramatic reduction in power and cost.
Keywords
CMOS integrated circuits; CMOS technology; gate-stack materials; mobility scaling; speed/power barrier; CMOS technology; Capacitive sensors; Costs; Dielectric materials; Energy consumption; Energy management; High K dielectric materials; Integrated circuit interconnections; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345359
Filename
1345359
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