Title :
Device challenges and opportunities
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
Abstract :
CMOS technology is facing exciting opportunities and formidable challenges. They include mobility scaling to overcome the speed/power barrier, new gate-stack materials and/or new device structures; to overcome the gate-length/leakage barrier; nonvolatile memory and universal memory to enlarge the market, and containment of costs. CMOS has much more to give in the next two decades, yet it is not too early, especially in universities, to start searching for not-CMOS-like circuit/system architectures that may require non-existing new devices but offer the promise of dramatic reduction in power and cost.
Keywords :
CMOS integrated circuits; CMOS technology; gate-stack materials; mobility scaling; speed/power barrier; CMOS technology; Capacitive sensors; Costs; Dielectric materials; Energy consumption; Energy management; High K dielectric materials; Integrated circuit interconnections; Semiconductor materials; Silicon;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345359