DocumentCode :
1607955
Title :
A new fabrication technique for 2.75 GHz ZnO-based FBAR devices
Author :
Mai, Linh ; Lee, Jae-young ; Pham, Van-Su ; Yoon, Giwan
Author_Institution :
Communication and Electronics Laboratory, School of Engineering, Information and Communications University (ICU), 119 Munjiro, Yuseong-gu, Daejeon 305-732, Korea
Volume :
3
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
We for the first time present a new fabrication technique of ZnO-based FBAR devices using a multi-layered Bragg reflector. To improve the resonance performance, 0.03??m-thick chromium (Cr)-adhesion layers were inserted into the Bragg reflector and also thermal treatments were made to the devices. At operating frequency of about 2.75 GHz, very high return loss values and quality factor (Q) were observed under an optimum thermal annealing condition.
Keywords :
Adhesives; Annealing; Chromium; Electrodes; Fabrication; Film bulk acoustic resonators; Q factor; Resonance; Sputtering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2008.4693878
Filename :
4693878
Link To Document :
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