Title :
High-gain DR circular patch on-chip antenna based on standard CMOS technology for millimeter-wave applications
Author :
Yu-Bo Wang ; Jia-Qi Liu ; Li, Joshua Le-Wei ; Chin, Alvin
Author_Institution :
Inst. of Electromagn. & Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents a high-gain on-chip antenna implemented in standard Si technology for millimeter-wave applications. A cubic dielectric resonator is mounted upon a `microstrip´ form circular patch antenna. Different from other works, a very thin SiO2 layer which is of about 4μm thick is used, and the whole structure is rather simple, which means that it can be easily fabricated and scaled. The fabricated antenna occupies a size of 1.45 mm*0.9 mm. The simulation results indicate that the gain at 95 GHz and 99.4 GHz are 4.0 dBi and 4.6 dBi, respectively. And the peak efficiency and radiation efficiency of the proposed antenna reaches 62% and 72%. While the antenna efficiency and realized gain from 92.5 GHz to 95.8 GHz and from 98.7 GHz to 100.1 GHz for side-fire radiation are above 35% and 0 dBi.
Keywords :
CMOS integrated circuits; antenna radiation patterns; dielectric resonator antennas; microstrip antennas; millimetre wave antennas; silicon compounds; CMOS technology; SiO2 layer; SiO2; cubic dielectric resonator; efficiency 62 percent; efficiency 72 percent; frequency 92.5 GHz to 95.8 GHz; frequency 95 GHz; frequency 98.7 GHz to 100.1 GHz; frequency 99.4 GHz; high-gain DR circular patch on-chip antenna; microstrip form circular patch antenna; millimeter-wave applications; CMOS integrated circuits; Dielectric resonator antennas; Dielectrics; Millimeter wave communication; System-on-chip; CMOS; Dielectric resonator (DR); High-gain; Millimeter-wave;
Conference_Titel :
Electromagnetics (iWEM), 2014 IEEE International Workshop on
Conference_Location :
Sapporo
DOI :
10.1109/iWEM.2014.6963685
