High-gain DR circular patch on-chip antenna based on standard CMOS technology for millimeter-wave applications

This paper presents a high-gain on-chip antenna implemented in standard Si technology for millimeter-wave applications. A cubic dielectric resonator is mounted upon a `microstrip´ form circular patch antenna. Different from other works, a very thin SiO₂ layer which is of about 4μm thick is used, and the whole structure is rather simple, which means that it can be easily fabricated and scaled. The fabricated antenna occupies a size of 1.45 mm*0.9 mm. The simulation results indicate that the gain at 95 GHz and 99.4 GHz are 4.0 dBi and 4.6 dBi, respectively. And the peak efficiency and radiation efficiency of the proposed antenna reaches 62% and 72%. While the antenna efficiency and realized gain from 92.5 GHz to 95.8 GHz and from 98.7 GHz to 100.1 GHz for side-fire radiation are above 35% and 0 dBi.