Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications

Author

Pellizzer, F. ; Pirovano, A. ; Ottogalli, F. ; Magistretti, M. ; Scaravaggi, M. ; Zuliani, P. ; Tosi, M. ; Benvenuti, A. ; Besana, P. ; Cadeo, S. ; Marangon, T. ; Morandi, R. ; Piva, R. ; Spandre, A. ; Zonca, R. ; Modelli, A. ; Varesi, E. ; Lowrey, T. ; L

Author_Institution

Central R&D, STMicroelectronics, Agrate Brianza, Italy

fYear

2004

Firstpage

18

Lastpage

19

Abstract

A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new μtrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 μA, endurance of 10¹¹ programming cycles and data retention capabilities for 10 years at 110°C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.

Keywords

CMOS integrated circuits; VLSI; semiconductor storage; μtrench phase-change memory cell; 110 degC; 600 muA; cell structure; embedded memory applications; stand-alone nonvolatile memory applications; CMOS technology; Electrodes; Manufacturing; Memory architecture; Nonvolatile memory; Phase change materials; Phase change memory; Research and development; Scalability; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345368

Filename

1345368