Title :
Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Author :
Pellizzer, F. ; Pirovano, A. ; Ottogalli, F. ; Magistretti, M. ; Scaravaggi, M. ; Zuliani, P. ; Tosi, M. ; Benvenuti, A. ; Besana, P. ; Cadeo, S. ; Marangon, T. ; Morandi, R. ; Piva, R. ; Spandre, A. ; Zonca, R. ; Modelli, A. ; Varesi, E. ; Lowrey, T. ; L
Author_Institution :
Central R&D, STMicroelectronics, Agrate Brianza, Italy
Abstract :
A novel cell structure for chalcogenide-based non-volatile Phase-Change Memories is presented. The new μtrench approach is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance. Programming currents of 600 μA, endurance of 1011 programming cycles and data retention capabilities for 10 years at 110°C have been demonstrated. The manufacturability is proven by experimental results from multi-megabit arrays.
Keywords :
CMOS integrated circuits; VLSI; semiconductor storage; μtrench phase-change memory cell; 110 degC; 600 muA; cell structure; embedded memory applications; stand-alone nonvolatile memory applications; CMOS technology; Electrodes; Manufacturing; Memory architecture; Nonvolatile memory; Phase change materials; Phase change memory; Research and development; Scalability; Tuning;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345368
