Title :
A multiband multistandard notch filter LNA for LTE, WCDMA and GSM for SAW-less frontends
Author :
Bormann, Dirk ; Kaehlert, Stefan ; Liao, Lei ; Wei, Muh-Dey ; Werth, Tobias D. ; Wunderlich, Ralf ; Heinen, Stefan
Author_Institution :
Integrated Analog Circuits & RF Syst., RWTH Aachen Univ., Aachen, Germany
Abstract :
A notch filter LNA for multiband multistandard cellular communication is presented. The circuit is capable of serving multiple FDD bands of the LTE standard and its cobanded WCDMA/UMTS counterparts. Due to its architecture also TDD bands, including GSM bands DCS1900, PCS1800 and the LTE TDD, can be covered. This is achieved without an additional off-chip interstage filter and LNA. The circuit has been fabricated on a commercial 90 nm technology and works from 1.4 V supply voltage. In FDD mode it draws less than 16 mA and in TDD mode less than 7 mA, respectively. For LTE band 2 (TX: 1850 - 1910 MHz, 80 MHz duplex distance) a noise figure of 3.6 dB is not exceeded at 20.4 dB gain. The 1-dB-desensitization point is -21 dBm, IIP3DPX = -12.3 dBm, and IIP3HDPX = -5.2 dBm while the filter attenuates a 3 MHz TX signal by 14.3 dB.
Keywords :
CMOS analogue integrated circuits; Long Term Evolution; UHF amplifiers; UHF filters; UHF integrated circuits; cellular radio; code division multiple access; low noise amplifiers; notch filters; 1-dB-desensitization point; CMOS analog integrated circuits; DCS1900 band; GSM band; LTE TDD band; PCS1800 band; SAW-less frontends; UMTS; WCDMA; frequency 1850 MHz to 1910 MHz; multiband multistandard cellular communication; multiband multistandard notch filter LNA; multiple FDD bands; size 90 nm; voltage 1.4 V; Capacitance; GSM; Gain; Impedance; Multiaccess communication; Noise; Receivers; Amplifier noise; CMOS analog integrated circuits; HF amplifiers; Q factor; tunable filters;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5