A 90 nm CMOS wideband low noise amplifier using bandwidth extension technique

A compact 90 nm CMOS wideband low noise amplifier (LNA) adopting bandwidth extension techniques is presented. The low noise characteristic of the LNA is achieved by the noise canceling technique and its gain flatness and bandwidth is enhanced by the gate inductive-peaking technique. The peaking inductor is realized by an active inductor for compact size and stability control. Without using any passive inductor, the size of the LNA core circuit is only 100 μm × 150 μm. From measurement results, the CMOS wideband LNA achieves a flat power gain of 12 dB with maximum variation of 0.5 dB from 100 MHz to 3600 MHz. The measured noise figure is 2.3 dB. Operated at 1.2 V, the CMOS LNA consumes 13 mW of power.