A 1.3 GHz–5.3 GHz wideband, high linearity balun low noise amplifier

Author

Yang, Kai-Hsiang ; Kuo, Ming-Ching ; Yan, Tzu-Chao ; Kuo, Chien-Nan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2011

Firstpage

506

Lastpage

509

Abstract

In this work, a balun low-noise amplifier (LNA) is designed and implemented in 0.18-μm CMOS process. The bulk cross-coupling (BCC) and capacitance cross-coupling (CCC) techniques are introduced in this LNA, which not only increase gain and linearity but also decrease noise figure. The 3 dB bandwidth extends from 1.27 GHz to 5.31 GHz. The maximum differential gain is 10.13 dB. Measured at 3 GHz, P1dB and IIP3 are -10 dBm and 0 dBm, respectively. The LNA core circuit dissipates 7.32 mW from 1.8 V power supply.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; baluns; integrated circuit design; low noise amplifiers; BCC technique; CCC technique; CMOS processing; bandwidth 1.27 GHz to 5.31 GHz; bulk cross-coupling technique; capacitance cross-coupling technique; gain 10.13 dB; gain 3 dB; maximum differential gain; noise figure; power 7.32 mW; voltage 1.8 V; wideband high linearity balun LNA; wideband high linearity balun low noise amplifier; CMOS integrated circuits; Capacitance; Gain; Impedance matching; Noise figure; Topology; Wideband; Balun; bulk cross-coupling (BCC); capacitance cross-coupling (CCC);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6173798