Title :
Silicon nanotesla magnetotransistors-temperature coefficient of resolution
Author :
Nathan, A. ; Kung, B. ; Manku, T.
Author_Institution :
Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Measurement results of the temperature dependence of magnetic field resolution are presented for the nanotesla-magnetotransistor (NMT). Over a bandwidth of 1 kHz, the temperature coefficient of resolution turns out to be +0.82%/ degrees C over a temperature range of 0 degrees C>
Keywords :
bipolar integrated circuits; bipolar transistors; electric sensing devices; electron device noise; magnetic field measurement; silicon; 0 to 100 C; 1 kHz; IC compatibility; Si magnetotransistors; collector noise currents; elemental semiconductor; magnetic field resolution; magnetic sensors; nanotesla-magnetotransistor; strong positive coherence; temperature coefficient of resolution; temperature dependence; CMOS technology; Integrated circuit noise; Low-frequency noise; Magnetic devices; Magnetic fields; Noise measurement; Signal resolution; Signal to noise ratio; Silicon; Temperature;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149083
