Title :
MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer
Author :
Ha, Y.K. ; Lee, J.E. ; Kim, H.-J. ; Bae, J.S. ; Oh, S.C. ; Nam, K.T. ; Park, S.O. ; Lee, N.I. ; Kang, H.K. ; Chung, U-in ; Moon, J.T.
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
Magnetic random access memory (MRAM) with magnetic tunnel junction (MTJ) using synthetic anti-ferromagnetic (SAF) free layers of various shapes has been developed. SAF free layers show the predominance in the scalability compared with a conventional single free layer. It is also revealed that a novel shaped MTJ with a SAF free layer has a remarkably large writing margin.
Keywords :
antiferromagnetism; magnetic multilayers; magnetic storage; magnetic tunnelling; random-access storage; magnetic random access memory; magnetic tunnel junction; synthetic antiferromagnetic free layer; Antiferromagnetic materials; Magnetic fields; Magnetic separation; Magnetic switching; Magnetic tunneling; Magnetization; Moon; Shape; Switches; Writing;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345371
