DocumentCode
1608263
Title
A 65nm-node LSTP (Low standby power) poly-Si/a-Si/HfSiON transistor with high Ion-Istandby ratio and reliability
Author
Yasuda, Y. ; Kimizuka, N. ; Iwamoto, Takuya ; Fujieda, Shun ; Ogura, Tsuneo ; Watanabe, Hiromi ; Tatsumi, Taizo ; Yamamoto, Ichiro ; Ito, Kei ; Watanabe, Hiromi ; Yamagata, Yoshiki ; Imai, Koichi
Author_Institution
Adv. Device Dev. Div., NEC Electron. Corp., Kanagawa, Japan
fYear
2004
Firstpage
40
Lastpage
41
Abstract
We have newly developed poly-Si/a-Si/HfSiON (EOT=1.6nm) transistor that features high Ion-Istandby ratio and reliability for 65nm-node LSTP (Low Standby Power) application. By carefully optimizing halo implant condition, excellent Ion-Istandby (=IgIoff) characteristics of Ion=520μA/Istandby=17pA (Ig=1.6pA, Ioff= 15pA) at Vdd=1.2V are obtained, which is the highest ratio ever reported. In addition, we have newly introduced thin amorphous-Si layer between HfSiON and phosphorous-doped poly-Si gate-electrode for reliability enhancement, and confirmed that PBTI (positive bias temperature instability) lifetime improves by two orders of magnitude with no performance degradation. We believe this technology enables further device scaling of poly-Si/HfSiON structure.
Keywords
MISFET; VLSI; amorphous semiconductors; elemental semiconductors; hafnium compounds; nanotechnology; silicon; 65 nm; 65nm-node LSTP; Low Standby Power; Si-HfSiON; halo implant condition; poly-Si/a-Si/HfSiON transistor; reliability; Capacitance; Capacitors; Degradation; Doping; Electrodes; High K dielectric materials; High-K gate dielectrics; Impurities; Leakage current; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345381
Filename
1345381
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