• DocumentCode
    160830
  • Title

    Power amplifier with high transformation ratio power combiner in GaAs Technology

  • Author

    Wai Lun Lam ; Chi Hou Chan

  • Author_Institution
    State Key Lab. of Millimeter Waves, City Univ. of Hong Kong, Hong Kong, China
  • fYear
    2014
  • fDate
    4-6 Aug. 2014
  • Firstpage
    199
  • Lastpage
    200
  • Abstract
    A 2.6 GHz voltage-mode power combiner with transformer is realized in Gallium Arsenide (GaAs) Technology. The proposed voltage-mode transformer combiner enhances the impedance transformation ratio without sacrificing its overall transfer efficiency. The improvement can let the power amplifier (PA) deliver higher output power and then tackle the barrier in low break-down voltage normally found in CMOS technology. A simple methodology is also presented to design such a combiner which is realized with a power amplifier (PA) design. Numerical modeling of the transformer and successful power combining of the 2-Watt PA demonstrate the proposed idea.
  • Keywords
    CMOS integrated circuits; gallium arsenide; power amplifiers; power combiners; CMOS technology; GaAs; high transformation ratio power combiner; impedance transformation ratio; power amplifier design; voltage-mode power combiner; voltage-mode transformer combiner; CMOS integrated circuits; Gallium arsenide; Impedance; Inductance; Power amplifiers; Power combiners; Power generation; GaAs power combiner; transformation ratio; voltage-mode transformer based combiner;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetics (iWEM), 2014 IEEE International Workshop on
  • Conference_Location
    Sapporo
  • Type

    conf

  • DOI
    10.1109/iWEM.2014.6963705
  • Filename
    6963705