DocumentCode
160830
Title
Power amplifier with high transformation ratio power combiner in GaAs Technology
Author
Wai Lun Lam ; Chi Hou Chan
Author_Institution
State Key Lab. of Millimeter Waves, City Univ. of Hong Kong, Hong Kong, China
fYear
2014
fDate
4-6 Aug. 2014
Firstpage
199
Lastpage
200
Abstract
A 2.6 GHz voltage-mode power combiner with transformer is realized in Gallium Arsenide (GaAs) Technology. The proposed voltage-mode transformer combiner enhances the impedance transformation ratio without sacrificing its overall transfer efficiency. The improvement can let the power amplifier (PA) deliver higher output power and then tackle the barrier in low break-down voltage normally found in CMOS technology. A simple methodology is also presented to design such a combiner which is realized with a power amplifier (PA) design. Numerical modeling of the transformer and successful power combining of the 2-Watt PA demonstrate the proposed idea.
Keywords
CMOS integrated circuits; gallium arsenide; power amplifiers; power combiners; CMOS technology; GaAs; high transformation ratio power combiner; impedance transformation ratio; power amplifier design; voltage-mode power combiner; voltage-mode transformer combiner; CMOS integrated circuits; Gallium arsenide; Impedance; Inductance; Power amplifiers; Power combiners; Power generation; GaAs power combiner; transformation ratio; voltage-mode transformer based combiner;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetics (iWEM), 2014 IEEE International Workshop on
Conference_Location
Sapporo
Type
conf
DOI
10.1109/iWEM.2014.6963705
Filename
6963705
Link To Document