DocumentCode :
160830
Title :
Power amplifier with high transformation ratio power combiner in GaAs Technology
Author :
Wai Lun Lam ; Chi Hou Chan
Author_Institution :
State Key Lab. of Millimeter Waves, City Univ. of Hong Kong, Hong Kong, China
fYear :
2014
fDate :
4-6 Aug. 2014
Firstpage :
199
Lastpage :
200
Abstract :
A 2.6 GHz voltage-mode power combiner with transformer is realized in Gallium Arsenide (GaAs) Technology. The proposed voltage-mode transformer combiner enhances the impedance transformation ratio without sacrificing its overall transfer efficiency. The improvement can let the power amplifier (PA) deliver higher output power and then tackle the barrier in low break-down voltage normally found in CMOS technology. A simple methodology is also presented to design such a combiner which is realized with a power amplifier (PA) design. Numerical modeling of the transformer and successful power combining of the 2-Watt PA demonstrate the proposed idea.
Keywords :
CMOS integrated circuits; gallium arsenide; power amplifiers; power combiners; CMOS technology; GaAs; high transformation ratio power combiner; impedance transformation ratio; power amplifier design; voltage-mode power combiner; voltage-mode transformer combiner; CMOS integrated circuits; Gallium arsenide; Impedance; Inductance; Power amplifiers; Power combiners; Power generation; GaAs power combiner; transformation ratio; voltage-mode transformer based combiner;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetics (iWEM), 2014 IEEE International Workshop on
Conference_Location :
Sapporo
Type :
conf
DOI :
10.1109/iWEM.2014.6963705
Filename :
6963705
Link To Document :
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