Title :
55nm high mobility SiGe(:C) pMOSFETs with HfO2 gate dielectric and TiN metal gate for advanced CMOS
Author :
Weber, O. ; Ducroquet, F. ; Ernst, Thomas ; Andrieu, F. ; Damlencourt, J.F. ; Hartmann, J.-M. ; Guillaumot, B. ; Papon, A.M. ; Dansas, H. ; Brevard, L. ; Toffoli, A. ; Besson, P. ; Martin, F. ; Morand, Y. ; Deleonibus, S.
Author_Institution :
CEA/DRT-LETI-17, Grenoble, France
Abstract :
For the first time, MOS transistors with compressively strained SiGe(:C) channel, metal gate and high-k dielectric are demonstrated down to 55nm gate length. SiGe(:C) surface channel pMOSFETs with HfO2 gate dielectric exhibit a 104 gate leakage reduction and a 65% mobility enhancement at high transverse effective field (1MV/cm) when compared to the universal SiO2/Si reference. With such a thin Equivalent Oxide Thickness (EOT= 16-18Å), this represents the best gate leakage/mobility trade-off ever published.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; hafnium compounds; high electron mobility transistors; titanium compounds; 55 nm; 55nm high mobility SiGe(:C) pMOSFETs; HfO2; HfO2 gate dielectric; SiGe:C; TiN; TiN metal gate; advanced CMOS; high transverse effective field; mobility enhancement; CMOS technology; Chemical vapor deposition; Epitaxial growth; Gate leakage; Germanium silicon alloys; Hafnium oxide; High-K gate dielectrics; MOSFETs; Silicon germanium; Tin;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345382
