Title :
Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology
Author :
Mistry, Khyati ; Armstrong, M. ; Auth, C. ; Cea, S. ; Coan, T. ; Ghani, T. ; Hoffmann, T. ; Murthy, A. ; Sandford, J. ; Shaheed, R. ; Zawadzki, K. ; Zhang, K. ; Thompson, S. ; Bohr, M.
Author_Institution :
Portland Technol. Dev., Intel Corp., Hillsboro, OR, USA
Abstract :
We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest PMOS drive current to date is reported: 0.72mA/ μm. Pattern sensitivity and mobility/Rext partitioning are discussed. Finally we measure inverter delays as low as 4.6pS, and show 50Mb SRAMs operational at 0.65V.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; elemental semiconductors; hole mobility; silicon; 0.65 V; 50 Mbit; 50Mb SRAMs; 90 nm; 90nm CMOS technology; Si; highest PMOS drive current; mobility/Rext partitioning; pattern sensitivity; uniaxial strained Si transistors; CMOS technology; Compressive stress; Costs; Degradation; Delay; MOS devices; MOSFETs; Silicon; Tensile stress; Uniaxial strain;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345387
