Title :
A method for improving the radiation tolerance of PIN photodiodes by optimization of n− layer thickness and light wavelength
Author :
Cédola, A.P. ; Cappelletti, M.A. ; Blancá, E. L Peltzer y
Author_Institution :
Fac. of Eng., Nat. Univ. of La Plata, Buenos Aires, Argentina
Abstract :
An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.
Keywords :
iterative methods; optimisation; p-i-n photodiodes; proton effects; radiation hardening (electronics); PIN photodiodes; incident light wavelength; intrinsic layer thickness; iterative method; light intensity; n-layer thickness; optimization; proton fluence; proton radiation tolerance; reverse current; Iterative methods; Light sources; Numerical models; PIN photodiodes; Protons; Radiation effects; Photodiodes; Radiation Effects; Semiconductor Device Modeling; Simulation;
Conference_Titel :
Test Workshop (LATW), 2010 11th Latin American
Conference_Location :
Pule del Este
Print_ISBN :
978-1-4244-7786-9
Electronic_ISBN :
978-1-4244-7785-2
DOI :
10.1109/LATW.2010.5550341
