• DocumentCode
    1608478
  • Title

    A method for improving the radiation tolerance of PIN photodiodes by optimization of n− layer thickness and light wavelength

  • Author

    Cédola, A.P. ; Cappelletti, M.A. ; Blancá, E. L Peltzer y

  • Author_Institution
    Fac. of Eng., Nat. Univ. of La Plata, Buenos Aires, Argentina
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.
  • Keywords
    iterative methods; optimisation; p-i-n photodiodes; proton effects; radiation hardening (electronics); PIN photodiodes; incident light wavelength; intrinsic layer thickness; iterative method; light intensity; n-layer thickness; optimization; proton fluence; proton radiation tolerance; reverse current; Iterative methods; Light sources; Numerical models; PIN photodiodes; Protons; Radiation effects; Photodiodes; Radiation Effects; Semiconductor Device Modeling; Simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Workshop (LATW), 2010 11th Latin American
  • Conference_Location
    Pule del Este
  • Print_ISBN
    978-1-4244-7786-9
  • Electronic_ISBN
    978-1-4244-7785-2
  • Type

    conf

  • DOI
    10.1109/LATW.2010.5550341
  • Filename
    5550341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1608478