Title :
Analysis of Material Science Problems in High-power LED Process
Author :
Zhou, YingYuan ; Li, ShuZhi ; Dai, WeiFeng ; Li, YueSheng
Author_Institution :
Project Dept., Shanghai Res. Center of Eng. & Technol. for Solid-State Lighting, Shanghai, China
Abstract :
This article explains the roles and material science problems of passivation layer, metal bonding, phosphor and Distributed Bragg Reflector in GaN-based LED device process, and introduces the methods and related processes to solve these problems from the view of material science.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium compounds; light emitting diodes; passivation; phosphors; wide band gap semiconductors; GaN; distributed Bragg reflector; high-power LED processing; material science problems; metal bonding; passivation layer; phosphor; Bonding; Gallium nitride; Light emitting diodes; Materials; Metals; Passivation; Phosphors; Compound Semiconductor; Distributed Bragg Reflector (DBR); Gallium Nitride (GaN); Light Emitting Diode (LED); Metal Bonding; Passivation Layer; Phosphor;
Conference_Titel :
Industrial Control and Electronics Engineering (ICICEE), 2012 International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-1450-3
DOI :
10.1109/ICICEE.2012.68
