Title :
A 3-D vertical Hall magnetic field sensor in CMOS technology
Author :
Paranjape, M. ; Ristic, L. ; Filanovsky, I.
Author_Institution :
Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada
Abstract :
A novel silicon sensor capable of detecting all three magnetic-field components is presented. The device is based on a vertical Hall structure and has been designed and fabricated in a standard 2 mu m CMOS process. Furthermore, a second test structure was implemented by introducing slight changes to the initial design in order to investigate the possibility of increasing device sensitivity. The results show a linear response to magnetic field in the x-, y-, and z-directions for both devices.<>
Keywords :
CMOS integrated circuits; Hall effect transducers; electric sensing devices; magnetic field measurement; 2 micron; 3D device; CMOS process; Si sensor; linear response; sensitivity; vertical Hall magnetic field sensor; CMOS process; CMOS technology; Current measurement; Hall effect devices; Magnetic devices; Magnetic fields; Magnetic sensors; Microelectronics; Silicon; Testing;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149085
