Title :
AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications
Author :
Bouzid, S. ; Hoel, V. ; Defrance, N. ; Maher, H. ; Lecourt, F. ; Renvoise, M. ; Smith, D. ; De Jaeger, J.C.
Author_Institution :
IEMN (Inst. d´´Electron., de Microelectron. et de Nanotechnol.), Lille Univ., Villeneuve-d´´Ascq, France
Abstract :
This paper reports the capability of AlGaN/GaN HEMTs on Si (111) substrates for microwave power applications above 30 GHz. A current gain cut-off frequency ft=90 GHz and a maximum power gain cut-off frequency fmax=135 GHz are obtained for a 80 nm gate-length transistor. These results, associated with low lag effects, demonstrate the capability of these transistors for high performance, cost effective, MMIC fabrication on a Si substrate for high frequency microwave power applications.
Keywords :
aluminium compounds; gallium compounds; millimetre wave power transistors; silicon; AlGaN-GaN; HEMT; MMIC fabrication; frequency 135 GHz; frequency 90 GHz; gain cut-off frequency; gate-length transistor; millimeter microwave power applications; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; HEMTs; Logic gates; Silicon; Substrates;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666316
