Title :
Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
Author :
Edwards, M.J. ; Vittoz, S. ; Amen, R. ; Rufer, L. ; Johander, P. ; Bowen, C.R. ; Allsopp, D.W.E.
Author_Institution :
Dept. of Mech. Eng., Univ. of Bath, Bath, UK
Abstract :
GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN/AlGaN/sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a `drumskin´ type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10-50 bar (5 MPa) and above 300°C.
Keywords :
III-V semiconductors; aluminium compounds; diaphragms; gallium compounds; high electron mobility transistors; pressure sensors; sapphire; Al2O3-GaN; HEMT wafer; alumina package; diaphragm structure; harsh environments; high electron mobility transistors; mechanical properties; optimisation; piezoelectric properties; pressure sensor; Biomembranes; Gallium nitride; Glass; HEMTs; Piezoresistance; Silicon; Stress;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666320
