Process integration of CVD Cu seed using ALD Ru glue layer for sub-65nm Cu interconnect

Author

Choi, S.-M. ; Park, K.-C. ; Suh, B.-S. ; Kim, I.-R. ; Kang, H.K. ; Suh, K.-P. ; Park, H.-S. ; Ha, J.-S. ; Joo, D.-K.

Author_Institution

Syst. LSI Div., Samsung Electron. Co. Ltd., Youngin, South Korea

fYear

2004

Firstpage

64

Lastpage

65

Abstract

Chemical-vapor-deposited(CVD) Cu film was successfully demonstrated as a seed layer for Cu electroplating, by using atomic-layer-deposited(ALD) Ru as a glue layer on ALD WNC barrier metal. Low via resistance of below 3Ω/via was obtained in 0.13 μm via chains, which was built in SiOC (k=2.9) intermetal dielectric. The adhesion between WNC and CVD Cu. estimated by mELT, was significantly improved by the insertion of ALD Ru and HR-XTEM analysis showed no interfacial layers at both Cu/Ru and Ru/WNC interfaces. In addition, Ru was found to promote the 2-D planar growth of CVD Cu film rather than the 3-D island growth.

Keywords

CVD coatings; adhesion; atomic layer deposition; copper; electrodeposits; integrated circuit interconnections; liquid phase epitaxial growth; metallic epitaxial layers; ruthenium; transmission electron microscopy; vapour phase epitaxial growth; 65 nm; ALD Ru glue layer; CVD Cu seed; Cu; Cu electroplating; HR-xTEM; Ru; adhesion; atomic-layer-deposited; process integration; sub-65nm Cu interconnect; Adhesives; Atherosclerosis; Atomic layer deposition; Chemical vapor deposition; Conductivity; Dielectrics; Large scale integration; Polymer films; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345395

Filename

1345395