DocumentCode
1608635
Title
Amorphous silicon anti-fuse for high-speed FPGA application
Author
Jain, V. ; Nariani, S.R. ; Gabriel, C. ; Boardman, W. ; Chan, D. ; Chang, K.Y. ; Gordon, K. ; Wong, R.
Author_Institution
VLSI Technol. Inc., San Jose, CA, USA
fYear
1992
Firstpage
111
Lastpage
114
Abstract
Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the resistance of the anti-fuse is greater than 1 GΩ and the capacitance is less than 1.3 fF. Programmed state resistances of less than 50 Ω have been achieved. This technology is in production for a 1.0-μm CMOS-based 1000-gate field programmable gate array (FPGA)
Keywords
CMOS integrated circuits; amorphous semiconductors; electric fuses; logic arrays; silicon; 1.0 micron; CMOS; amorphous silicon; high-speed FPGA; metal-to-metal anti-fuse; programmable material; programmed state resistances; programming characteristics; unprogrammed state; Aluminum; Amorphous silicon; CMOS technology; Capacitance; Dielectrics; Electrodes; Electrons; Field programmable gate arrays; Integrated circuit interconnections; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference and Exhibit, 1992., Proceedings of Fifth Annual IEEE International
Conference_Location
Rochester, NY
Print_ISBN
0-7803-0768-2
Type
conf
DOI
10.1109/ASIC.1992.270296
Filename
270296
Link To Document