DocumentCode :
1608663
Title :
High-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 and (Bi,Na)TiO3 single crystals
Author :
Noguchi, Yuji ; Yamamoto, Kastuya ; Kitanaka, Yuuki ; Suzuki, Muneyasu ; Miyayama, Masaru
Author_Institution :
Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, 153-8904, Japan
Volume :
1
fYear :
2008
Firstpage :
1
Lastpage :
2
Abstract :
We have investigated the effects of high-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 on the polarization properties along the a(b)-axis. Domain observations by piezoresponse force microscope demonstrate that a small remanent polarization (Pr) for the crystals grown at 0.02MPa is attributed to the clamping of 90?? domain walls by oxygen vacancies. The vacancy formation of Bi and O during crystal growth at high temperatures is suppressed at a higher oxygen pressure, leading to a larger Pr of 47 ??C/cm2 for the crystals grown at 1MPa oxygen. High-oxygen-pressure sintering is proposed to be effective for obtaining Bi4Ti3O12-based devices with enhanced polarization properties.
Keywords :
Bismuth; Clamps; Crystals; Electrooptic devices; Ferroelectric materials; Hysteresis; Leakage current; Microscopy; Polarization; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location :
Santa Re, NM, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-2744-4
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2008.4693910
Filename :
4693910
Link To Document :
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