High-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 and (Bi,Na)TiO3 single crystals

Author

Noguchi, Yuji ; Yamamoto, Kastuya ; Kitanaka, Yuuki ; Suzuki, Muneyasu ; Miyayama, Masaru

Author_Institution

Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, 153-8904, Japan

Volume

1

fYear

2008

Firstpage

1

Lastpage

2

Abstract

We have investigated the effects of high-oxygen-pressure crystal growth of ferroelectric Bi4Ti3O12 on the polarization properties along the a(b)-axis. Domain observations by piezoresponse force microscope demonstrate that a small remanent polarization (Pr) for the crystals grown at 0.02MPa is attributed to the clamping of 90?? domain walls by oxygen vacancies. The vacancy formation of Bi and O during crystal growth at high temperatures is suppressed at a higher oxygen pressure, leading to a larger Pr of 47 ??C/cm2 for the crystals grown at 1MPa oxygen. High-oxygen-pressure sintering is proposed to be effective for obtaining Bi4Ti3O12-based devices with enhanced polarization properties.

Keywords

Bismuth; Clamps; Crystals; Electrooptic devices; Ferroelectric materials; Hysteresis; Leakage current; Microscopy; Polarization; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the

Conference_Location

Santa Re, NM, USA

ISSN

1099-4734

Print_ISBN

978-1-4244-2744-4

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2008.4693910

Filename

4693910