Effects of soft-UV irradiation on organic thin film transistors with different gate dielectrics

We subjected organic thin film transistors with different gate dielectrics to soft-UV irradiation. Irradiation reduces the transconductance on all devices, regardless the gate dielectric employed. However, UV irradiation differently impacts on the drain current: it decreases on devices with hexamethyl-disilazane treated gate dielectric, mainly due to transconductance degradation. Conversely, negative charge trapping dominates over the transconductance degradation on devices with silicon nanoparticles leading to a drain current increase.