Title :
A novel 3-D magnetic field sensor in standard CMOS technology
Author :
Mingming Zhang ; Misra, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA
Abstract :
The authors present a 3-D magnetic field sensor in a standard 2 mu m CMOS technology. The sensor uses two CMOS compatible 1-D vertical magnetotransistors positioned at a right angle to each other to measure two field components, and a MAGFET and/or a lateral bipolar transistor is used to measure the third component. The two base contacts minimize the offset due to asymmetry during fabrication. The MOS device controls the base surface potential and thereby improves the sensitivity and the noise performances and minimizes the cross-sensitivity in the lateral device. Simulations were performed to study the electrical characteristics and to determine the optimized geometry for achieving high current gain by using the 2-D device simulation software PISCES-IIB. The device shows a relative sensitivity of S/sub rx/=1.05/T, S/sub ry/=0.75/T, and S/sub rz/=0.25/T in X-, Y-, and Z-directions, respectively, to the applied magnetic field.<>
Keywords :
CMOS integrated circuits; electric sensing devices; magnetic field measurement; 2 micron; 2D device simulation software; 3D magnetic field sensor; CMOS technology; MAGFET; PISCES-IIB; cross-sensitivity; high current gain; lateral bipolar transistor; noise performances; optimized geometry; sensitivity; vertical magnetotransistors; Bipolar transistors; CMOS technology; Contacts; Electric variables; Fabrication; MOS devices; Magnetic field measurement; Magnetic sensors; Position measurement; Solid modeling;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149086
