DocumentCode
1608800
Title
Oxygen vacancies in SrTiO3
Author
Choi, Euiyoung ; Kim, Joho ; Cuong, Doduc ; Lee, Jaichan
Author_Institution
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Kyunggido 440-746, Korea
Volume
1
fYear
2008
Firstpage
1
Lastpage
2
Abstract
Oxygen vacancy clustering in SrTiO3-?? thin films has been investigated by electrical transport and photoemission spectroscopy. We deposited SrTiO3-?? thin films on LaAlO3(001) substrate at reducing oxygen ambients. The carrier density did not increase with decreasing the ambient oxygen pressure. Photoemission study shows multi valence state of Ti ion including Ti+2 which localized state. Those results are explained by electron localization via oxygen vacancy clustering.
Keywords
Atmospheric measurements; Charge carrier density; Density measurement; Distortion measurement; Electrons; Ferroelectric materials; Oxygen; Photoelectricity; Spectroscopy; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693917
Filename
4693917
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