Title :
Ultra high frequency performance in all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As DHBT
Author :
Knight, R. ; Sexton, J. ; Missous, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK
Abstract :
A new all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As double heterojunction bipolar transistor (DHBT) showing complete elimination of current blocking has been grown using solid source molecular beam epitaxy (MBE). The development of the DHBT required careful epitaxial design trade-offs which culminated in an optimum structure achieving ground breaking RF performance in excess of 100 GHz and excellent DC performance for emitter dimensions of 1×5 μm2. These new DHBTs which only use ternary alloys lead to simplified device growth and fabrication options.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; DHBT; In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As; RF performance; double heterojunction bipolar transistor; epitaxial design trade-offs; fabrication options; frequency 100 GHz; solid source molecular beam epitaxy; ultrahigh frequency performance; Doping; Epitaxial growth; Indium gallium arsenide; Metals; Radio frequency;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666332
