Ultra high frequency performance in all ternary In0.52Al0.48As-In0.53Ga0.47As-In0.52Al0.48As DHBT

Author

Knight, R. ; Sexton, J. ; Missous, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Manchester, Manchester, UK

fYear

2010

Firstpage

17

Lastpage

20

Abstract

A new all ternary In_0.52Al_0.48As-In_0.53Ga_0.47As-In_0.52Al_0.48As double heterojunction bipolar transistor (DHBT) showing complete elimination of current blocking has been grown using solid source molecular beam epitaxy (MBE). The development of the DHBT required careful epitaxial design trade-offs which culminated in an optimum structure achieving ground breaking RF performance in excess of 100 GHz and excellent DC performance for emitter dimensions of 1×5 μm². These new DHBTs which only use ternary alloys lead to simplified device growth and fabrication options.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; DHBT; In_0.52Al_0.48As-In_0.53Ga_0.47As-In_0.52Al_0.48As; RF performance; double heterojunction bipolar transistor; epitaxial design trade-offs; fabrication options; frequency 100 GHz; solid source molecular beam epitaxy; ultrahigh frequency performance; Doping; Epitaxial growth; Indium gallium arsenide; Metals; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5666332

Filename

5666332