Title :
MO CVD growth of ZnO with different growth rate
Author :
Nohavica, D. ; Gladkov, P. ; Grym, J. ; Jarchovsky, Z.
Author_Institution :
Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague, Czech Republic
Abstract :
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More complex morphology containing longer microrods and pyramids was obtained at high growth rate. Photoluminescence of the samples demonstrated improvement of the ZnO quality when the growth rate increased.
Keywords :
II-VI semiconductors; MOCVD; photoluminescence; semiconductor growth; surface morphology; ultraviolet radiation effects; wide band gap semiconductors; zinc compounds; GaP (111) substrate; MO CVD growth; N2O plasma; Si (100) substrate; UV irradiation; ZnO; ZnO layers; ZnO quality; complex morphology; deposition zone; growth rate; low pressure apparatus; microrods; photoluminescence; pyramids; regular nanowall type; surface morphology; Films; Morphology; Photoluminescence; Plasmas; Silicon; Substrates; Zinc oxide;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666333
