Title :
A novel MNOS technology using gate hole injection in erase operation for embedded nonvolatile memory applications
Author :
Ito, F. ; Kawashima, Y. ; Sakai, T. ; Kanamaru, Y. ; Ishii, Y. ; Mizuno, M. ; Hashimoto, T. ; Ishimaru, Tetsuya ; Mine, T. ; Matsuzaki, N. ; Kume, H. ; Tanaka, T. ; Shinagawa, Y. ; Toya, T. ; Okuyama, K. ; Kuroda, K. ; Kubota, K.
Author_Institution :
Renesas Technol. Corp., Ibaraki, Japan
Abstract :
A novel MNOS memory with gate hole injection in erase operation has been demonstrated for embedded nonvolatile memory applications. Superior characteristics with 10μsec programming and 10msec erasing speed were obtained as compared with conventional MONOS structures. In addition, we found that the localized interface trap at source side region was generated by excess holes during erasing cycle and could be suppressed by Lg scaling. This result shows the good scalability of this technology.
Keywords :
MISFET; VLSI; interface states; nanotechnology; semiconductor storage; 10 ms; 10 mus; MNOS technology; embedded nonvolatile memory applications; erase operation; erasing speed; gate hole injection; localized interface trap; source side region; Character generation; Circuits; Degradation; Electrodes; Electrons; MONOS devices; Nonvolatile memory; Scalability; Silicon compounds; Voltage;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345404
