• DocumentCode
    1608921
  • Title

    Temperature dependence of the pyroelectric behaviour in GaN/AlGaN

  • Author

    Laposa, A. ; Jakovenko, J. ; Husak, M.

  • Author_Institution
    Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
  • fYear
    2010
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    So far the dependence of the spontaneous polarization coefficient for GaN and AlN on temperature has been measured to be minimal, which corresponds with expectation that the spontaneous polarization is reduced at the elevated temperatures of interest. There are also no reports on the piezoelectric polarization at higher temperature. This paper is initial study on the influence of temperature related pyroelectric behaviour in GaN/AlGaN. Summarize recent findings and consideration.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; polarisation; pyroelectricity; GaN-AlGaN; elevated temperature; spontaneous polarization coefficient; temperature related pyroelectric behaviour; Aluminum gallium nitride; Gallium nitride; Materials; Temperature dependence; Temperature measurement; Tensile stress; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-8574-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.2010.5666340
  • Filename
    5666340