DocumentCode
1608921
Title
Temperature dependence of the pyroelectric behaviour in GaN/AlGaN
Author
Laposa, A. ; Jakovenko, J. ; Husak, M.
Author_Institution
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
fYear
2010
Firstpage
93
Lastpage
96
Abstract
So far the dependence of the spontaneous polarization coefficient for GaN and AlN on temperature has been measured to be minimal, which corresponds with expectation that the spontaneous polarization is reduced at the elevated temperatures of interest. There are also no reports on the piezoelectric polarization at higher temperature. This paper is initial study on the influence of temperature related pyroelectric behaviour in GaN/AlGaN. Summarize recent findings and consideration.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; polarisation; pyroelectricity; GaN-AlGaN; elevated temperature; spontaneous polarization coefficient; temperature related pyroelectric behaviour; Aluminum gallium nitride; Gallium nitride; Materials; Temperature dependence; Temperature measurement; Tensile stress; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4244-8574-1
Type
conf
DOI
10.1109/ASDAM.2010.5666340
Filename
5666340
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