DocumentCode :
1608921
Title :
Temperature dependence of the pyroelectric behaviour in GaN/AlGaN
Author :
Laposa, A. ; Jakovenko, J. ; Husak, M.
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
fYear :
2010
Firstpage :
93
Lastpage :
96
Abstract :
So far the dependence of the spontaneous polarization coefficient for GaN and AlN on temperature has been measured to be minimal, which corresponds with expectation that the spontaneous polarization is reduced at the elevated temperatures of interest. There are also no reports on the piezoelectric polarization at higher temperature. This paper is initial study on the influence of temperature related pyroelectric behaviour in GaN/AlGaN. Summarize recent findings and consideration.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; polarisation; pyroelectricity; GaN-AlGaN; elevated temperature; spontaneous polarization coefficient; temperature related pyroelectric behaviour; Aluminum gallium nitride; Gallium nitride; Materials; Temperature dependence; Temperature measurement; Tensile stress; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
Type :
conf
DOI :
10.1109/ASDAM.2010.5666340
Filename :
5666340
Link To Document :
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