DocumentCode
1608979
Title
Power-aware 65 nm node CMOS technology using variable VDD and back-bias control with reliability consideration for back-bias mode
Author
Togo, M. ; Fukai, T. ; Nakahara, Y. ; Koyama, S. ; Makabe, M. ; Hasegawa, E. ; Nagase, M. ; Matsuda, T. ; Sakamoto, K. ; Fujiwara, S. ; Goto, Y. ; Yamamoto, T. ; Mogami, T. ; Ikeda, M. ; Yamagata, Y. ; Imai, K.
Author_Institution
Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan
fYear
2004
Firstpage
88
Lastpage
89
Abstract
We have developed a power-aware CMOS technology featuring variable VDD and back-bias control. Three typical operation modes are defined: high-speed mode (VDD = 1.2V, VB = 0V), nominal mode (VDD = 0.9V, VB = -0.5V) and power-save mode (VDD = 0.6V, VB = -2.0V). Compared with nominal mode, one and a half order of magnitude reduction of standby leakage current is achieved with power-save mode, while 75% higher drivability is achieved with high-speed mode. Device reliability for back-bias condition was also investigated. With higher back-bias, NBT (Negative Bias Temperature) degradation for pFET is enhanced especially in the case of thinner gate oxide. From activation energy, we believe the dominant mechanism is SHH (Substrate Hot-Hole) injection. Reduced VDD at standby mode drastically alleviates this degradation caused by NBT stress and SHH injection. With appropriate VDD and VB combination, power-aware 65nm CMOS with sufficient reliability can be achieved.
Keywords
CMOS integrated circuits; integrated circuit reliability; leakage currents; -0.5 V; -2.0 V; 0.6 V; 0.9 V; 1.2 V; 65 nm; activation energy; back-bias control; high-speed mode; nominal mode; power-aware 65 nm node CMOS technology; power-save mode; reliability consideration; variable VDD; CMOS process; CMOS technology; Control systems; Degradation; Electric variables control; Leakage current; National electric code; Power dissipation; Power system reliability; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345409
Filename
1345409
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