Thermoelectrical properties of TiO2:(Co, Pd) and TiO2:Nb thin films

Author

Prociów, E. ; Mazur, M. ; Domaradzki, J. ; Wojcieszak, D. ; Kaczmarek, D. ; Gawor, T.

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2010

Firstpage

69

Lastpage

72

Abstract

In this work thermoelectrical properties of TiO₂:(Co, Pd) and TiO₂:Nb thin films have been described. Thin films were performed by high energy magnetron sputtering method. Sputtering process was carried out from mosaic targets under low pressure of oxygen reactive gas. Electrical and thermoelectrical properties of as deposited and annealed at 800 K thin films were analyzed based on resistivity and thermoelectrical voltage measurements. Results have shown that manufactured thin films had different type of electrical conductivity and good thermoelectrical stability.

Keywords

annealing; cobalt; electrical conductivity; electrical resistivity; niobium; palladium; sputter deposition; thermoelectricity; thin films; titanium compounds; TiO₂:Co,Pd; TiO₂:Nb; annealing; electrical conductivity; electrical resistivity; high energy magnetron sputtering; mosaic targets; oxygen reactive gas; temperature 800 K; thermoelectrical properties; thermoelectrical stability; thermoelectrical voltage measurements; thin films; Annealing; Conductivity; Temperature; Temperature measurement; Temperature sensors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5666345

Filename

5666345