L-band low noise amplifier using a novel InGaAs/InAlAs/InP device

In this work, the design of a novel low noise amplifier (LNA) based on 1μm gate-length InGaAs/InAlAs/InP pHEMT transistors is discussed. Designed for radio astronomy applications, this amplifier exploits a common drain configuration as an input stage and a common source inductive degeneration topology as an output stage. It exhibits a maximum gain of 30 dB within an input 1-dB compression point of -16 dBm. The noise figure is 0.4 dB with an input return loss greater than -10 dB and an output return loss of -12.5 dB. The LNA consumes 85 mW from a 1.5 V power supply.