Title :
Polycrystalline Si films on glass substrates prepared by metal induced crystallization
Author :
Dimova-Malinovska, D. ; Angelov, O. ; Sendova-Vassileva, M. ; Grigorov, V. ; Pivin, J.C.
Author_Institution :
Central Lab. for Solar Energy & New Energy Sources, Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
Metal induced crystallization of amorphous Si (a-Si) has been studied for different deposited structures and different metal concentrations λass/a-Si/Al, glass/Al/a-Si+Al and glass/a-Si+Ni. The structures were deposited at different substrate temperatures by RF magnetron sputtering and were isothermally annealed at temperatures below that of the a-Si solid phase crystallization. The annealing was performed in air, N2 or in vacuum. Raman spectroscopy and Rutherford Back-scattering were used to study the crystallinity of the resulting poly-Si films.
Keywords :
Raman spectra; Rutherford backscattering; amorphous semiconductors; annealing; crystallisation; doping profiles; elemental semiconductors; semiconductor thin films; silicon; sputter deposition; N2; N2 annealing; RF magnetron sputtering; Raman spectroscopy; Rutherford back-scattering; Si-Al; Si:Al-Al; Si:Ni; a-Si; air annealing; amorphous Si; glass substrates; glass/Al/a-Si+Al structure; glass/a-Si+Ni structure; glass/a-Si/Al structure; isothermal anneal temperature; metal concentrations; metal induced crystallization; poly-Si films; polycrystalline Si films; substrate temperatures; vacuum annealing; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Glass; Radio frequency; Raman scattering; Semiconductor films; Sputtering; Temperature;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490871
