Title :
High temperature and high power stability investigation of Al-based ohmic contacts to p-type 4H-SiC
Author :
Kakanakov, R. ; Kasamakova-Kolaklieva, L. ; Hristeva, N. ; Lepoeva, G. ; Gomes, Joao Bartolo ; Avramova, I. ; Marinova, T.
Author_Institution :
Inst. of Appl. Phys., Bulgarian Acad. of Sci., Plovdiv, Bulgaria
Abstract :
Three types of low resistivity Al-based ohmic contacts to p-type 4H-SiC, Au/Al/Si, Au/AlSiTi and Au/Ti/Al have been studied. Reproducible contact resistivity of 8.30×10-5 Ωcm2, 6.42×10-5 Ωcm2 and 1.42×10-5 Ωcm2 has been obtained for Al/Si, AlSiTi and Al/Ti contacts, respectively. The investigation of the thermal properties of Al-based contacts shows that addition of Ti to the contact composition improves its stability at ageing temperatures as high as 700°C, at operating temperatures up to 450°C and current densities of 103 A/cm2. XPS analysis of as-deposited and annealed contacts has been performed to explain the observed thermal properties.
Keywords :
X-ray photoelectron spectra; ageing; aluminium; aluminium alloys; annealing; contact resistance; current density; electrical resistivity; elemental semiconductors; gold; ohmic contacts; reliability; semiconductor materials; silicon; silicon alloys; silicon compounds; thermal stability; titanium; titanium alloys; 450 C; 700 C; Al-based ohmic contacts; Au-Al-Si; Au-AlSiTi; Au-Ti-Al; Au/Al/Si ohmic contacts; Au/AlSiTi ohmic contacts; Au/Ti/Al ohmic contacts; SiC; XPS analysis; ageing temperatures; annealed contacts; contact composition; contact resistivity; current densities; high power stability; high temperature stability; operating temperatures; p-type 4H-SiC; thermal properties; Annealing; Artificial intelligence; Chemistry; Conductivity; Gold; Ohmic contacts; Silicon carbide; Temperature; Testing; Thermal stability;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on
Print_ISBN :
0-7803-8422-9
DOI :
10.1109/ISSE.2004.1490874
