• DocumentCode
    1609142
  • Title

    Integration of a 90nm RF CMOS technology (200GHz fmax - 150GHz fT NMOS) demonstrated on a 5GHz LNA

  • Author

    Jeamsaksiri, W. ; Mercha, A. ; Ramos, J. ; Linten, D. ; Thijs, S. ; Jenei, S. ; Detcheverry, C. ; Wambacq, Piet ; Velghe, R. ; Decoutere, S.

  • Author_Institution
    Interuniv. Microelectron. Center, Leuven, Belgium
  • fYear
    2004
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz fmax -150GHz fT) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.
  • Keywords
    CMOS integrated circuits; MOSFET; millimetre wave integrated circuits; radiofrequency amplifiers; system-on-chip; 150 GHz; 200 GHz; 5GHz LNA; 90 nm; 90nm RF CMOS technology; high Q passive components; low power RF systems on chip; maximum measurement frequency; monolithic 5GHz low noise amplifier; CMOS technology; Current measurement; Low-noise amplifiers; MOSFETs; Performance evaluation; Performance gain; Portfolios; Radio frequency; Radiofrequency amplifiers; System-on-a-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345416
  • Filename
    1345416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609142