DocumentCode
1609147
Title
Thermal diffusivity and thermal conductivity measurement in thick — Film microsystems
Author
Weglarski, Mariusz
Author_Institution
Dept. of Electron. & Commun. Syst., Rzeszow Univ. of Technol., Rzeszow, Poland
fYear
2008
Firstpage
139
Lastpage
144
Abstract
The main aim of this work is to develop an experimental technique that would be suitable for determining the thermal properties (such as thermal diffusivity, thermal conductivity and specific heat) of resistive or conductive layers in microelectronic structures made in thick-film technology. The structural analysis of the typical thick-film components and the mathematical model with analytical solution were described in this paper. The solution of the analytical model (for the typical thick-film structure - active layer placed on alumina substrate) has been compared with the experimental results. The many factors which have influence on accuracy of obtained results have been taken into consideration and discussed.
Keywords
micromechanical devices; specific heat; thermal conductivity; thermal diffusivity; thick films; Al2O3; active layer; alumina substrate; conductive layer; microelectronic structures; resistive layer; specific heat; structural analysis; thermal conductivity; thermal diffusivity; thick-film microsystem; Conductive films; Conductivity measurement; Infrared heating; Mathematical model; Nondestructive testing; Power system transients; Pulse power systems; Substrates; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
Conference_Location
Budapest
Print_ISBN
978-1-4244-3972-0
Electronic_ISBN
978-1-4244-3974-4
Type
conf
DOI
10.1109/ISSE.2008.5276506
Filename
5276506
Link To Document