• DocumentCode
    1609147
  • Title

    Thermal diffusivity and thermal conductivity measurement in thick — Film microsystems

  • Author

    Weglarski, Mariusz

  • Author_Institution
    Dept. of Electron. & Commun. Syst., Rzeszow Univ. of Technol., Rzeszow, Poland
  • fYear
    2008
  • Firstpage
    139
  • Lastpage
    144
  • Abstract
    The main aim of this work is to develop an experimental technique that would be suitable for determining the thermal properties (such as thermal diffusivity, thermal conductivity and specific heat) of resistive or conductive layers in microelectronic structures made in thick-film technology. The structural analysis of the typical thick-film components and the mathematical model with analytical solution were described in this paper. The solution of the analytical model (for the typical thick-film structure - active layer placed on alumina substrate) has been compared with the experimental results. The many factors which have influence on accuracy of obtained results have been taken into consideration and discussed.
  • Keywords
    micromechanical devices; specific heat; thermal conductivity; thermal diffusivity; thick films; Al2O3; active layer; alumina substrate; conductive layer; microelectronic structures; resistive layer; specific heat; structural analysis; thermal conductivity; thermal diffusivity; thick-film microsystem; Conductive films; Conductivity measurement; Infrared heating; Mathematical model; Nondestructive testing; Power system transients; Pulse power systems; Substrates; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
  • Conference_Location
    Budapest
  • Print_ISBN
    978-1-4244-3972-0
  • Electronic_ISBN
    978-1-4244-3974-4
  • Type

    conf

  • DOI
    10.1109/ISSE.2008.5276506
  • Filename
    5276506