Title :
Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma
Author :
Oleszkiewicz, W. ; Gryglewicz, J. ; Paszkiewicz, B. ; Paszkiewicz, R. ; Szyszka, A. ; Czek-Krasowska, M. Ramil ; Stafiniak, A. ; Tlaczala, M.
Author_Institution :
Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wrocław, Poland
Abstract :
The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different AlxGa1-xN/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium compounds; semiconductor heterojunctions; sputter etching; surface topography; AFM technique; AlxGa1-xN-GaN; Oxford Instruments Plasmalab80Plus system; heterostructure surface topography; reactive ion etching; Etching; Gallium nitride; Logic gates; Materials; Surface roughness; Surface topography;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666352
