• DocumentCode
    1609211
  • Title

    Reactive ion etching of AlxGa1−xN/GaN heterostructure using Cl2, BCl3/Ar gas plasma

  • Author

    Oleszkiewicz, W. ; Gryglewicz, J. ; Paszkiewicz, B. ; Paszkiewicz, R. ; Szyszka, A. ; Czek-Krasowska, M. Ramil ; Stafiniak, A. ; Tlaczala, M.

  • Author_Institution
    Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wrocław, Poland
  • fYear
    2010
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    The etching processes were carried out in Oxford Instruments Plasmalab80Plus system. Present work is concentrating on discussion of a scope of different AlxGa1-xN/GaN heterostructures in relation to percentage composition of aluminum. The topography of heterostructure surface and slope was controlled using AFM technique.
  • Keywords
    III-V semiconductors; aluminium compounds; atomic force microscopy; gallium compounds; semiconductor heterojunctions; sputter etching; surface topography; AFM technique; AlxGa1-xN-GaN; Oxford Instruments Plasmalab80Plus system; heterostructure surface topography; reactive ion etching; Etching; Gallium nitride; Logic gates; Materials; Surface roughness; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
  • Conference_Location
    Smolenice
  • Print_ISBN
    978-1-4244-8574-1
  • Type

    conf

  • DOI
    10.1109/ASDAM.2010.5666352
  • Filename
    5666352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609211