Title :
Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs
Author :
Isa, M. Mohamad ; Saguatti, D. ; Verzellesi, G. ; Chini, A. ; Ian, K.W. ; Missous, M.
Author_Institution :
M&N Group, Univ. of Manchester, Manchester, UK
Abstract :
This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.
Keywords :
III-V semiconductors; aluminium compounds; epitaxial layers; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; low-power electronics; millimetre wave power amplifiers; semiconductor device breakdown; semiconductor device noise; DC characteristic; InAlAs-InGaAs; RF characteristic; breakdown voltage; epitaxial layer design; field plate structure; high breakdown pHEMT; high frequency pHEMT; high-added power efficiency amplifier design; low noise pseudomorphic high electron mobility transistor; Electric breakdown; Indium compounds; Indium phosphide; Logic gates; PHEMTs; Performance evaluation;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666354
