Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

Author

Isa, M. Mohamad ; Saguatti, D. ; Verzellesi, G. ; Chini, A. ; Ian, K.W. ; Missous, M.

Author_Institution

M&N Group, Univ. of Manchester, Manchester, UK

fYear

2010

Firstpage

41

Lastpage

44

Abstract

This paper presents a Novel low noise, high breakdown InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs). The improvements in breakdown voltage are brought about by a judicious combination of epitaxial layer design and field plate techniques. No significant degradations of DC and RF characteristics are observed for devices with field plate structures. An outstanding improvement in breakdown voltages of >30% is attained by field plate devices which should allow their usage in efficient high-added power efficiency amplifiers design.

Keywords

III-V semiconductors; aluminium compounds; epitaxial layers; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; low-power electronics; millimetre wave power amplifiers; semiconductor device breakdown; semiconductor device noise; DC characteristic; InAlAs-InGaAs; RF characteristic; breakdown voltage; epitaxial layer design; field plate structure; high breakdown pHEMT; high frequency pHEMT; high-added power efficiency amplifier design; low noise pseudomorphic high electron mobility transistor; Electric breakdown; Indium compounds; Indium phosphide; Logic gates; PHEMTs; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on

Conference_Location

Smolenice

Print_ISBN

978-1-4244-8574-1

Type

conf

DOI

10.1109/ASDAM.2010.5666354

Filename

5666354