DocumentCode
1609297
Title
Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface
Author
Shiraishi, Kotaro ; Yamada, K. ; Torii, K. ; Akasaka, Y. ; Nakajima, K. ; Kohno, M. ; Chikyo, T. ; Kitajima, H. ; Arikado, T.
Author_Institution
Inst. of Phys., Univ. of Tsukuba, Japan
fYear
2004
Firstpage
108
Lastpage
109
Abstract
We report that O vacancy (Vo) formation in ionic Hf-based dielectrics and subsequent electron transfer into poly Si gates across the interface, definitely cause substantial flat band (Vfb) shifts especially for p+ gate MISFETs. Our theory can systematically reproduce experiments related to Hf-based dielectrics, and gives a guiding principle towards gate/high-k oxide interface control.
Keywords
Fermi level; MISFET; defect states; elemental semiconductors; hafnium compounds; interface states; semiconductor-insulator boundaries; silicon; Fermi level pinning; O vacancy; Si-HfO2; electron transfer; guiding principle; polySi/Hf-based high-k oxide interface; substantial flat band shifts; Channel bank filters; Dielectric films; Dielectric losses; Electrons; High K dielectric materials; High-K gate dielectrics; Laboratories; Materials science and technology; Nanotechnology; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345421
Filename
1345421
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