Title :
Structural and chemical analysis of self-aligned titanium silicide formed by furnace annealing
Author :
Barbarini, Elena ; Guastella, Salvatore ; Pirri, Fabrizio
Author_Institution :
Dept. of Mater. Sci. & Chem. Eng., Politec. di Torino, Torino, Italy
Abstract :
In this paper the furnace annealing effects on the titanium silicide formation over a range of temperatures are investigated using physical and chemical measurements. In particular the formation steps and the properties of the interface between TiSi2 and Si have been characterized by mean of Transmission Electron Microscopy. The experiments have been performed with the final aim to obtain Schottky barrier diodes (SBDs) whose fabrication process is suitable for a production line.
Keywords :
Schottky diodes; annealing; chemical analysis; crystal structure; silicon; titanium compounds; transmission electron microscopy; Schottky barrier diodes; TEM; TiSi2-Si; TiSi2-Si interface properties; chemical analysis; chemical measurements; fabrication process; formation steps; furnace annealing effects; physical measurements; production line; self-aligned titanium silicide; structural analysis; titanium silicide formation; transmission electron microscopy; Annealing; Furnaces; Schottky diodes; Silicides; Silicon; Temperature measurement; Titanium;
Conference_Titel :
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location :
Smolenice
Print_ISBN :
978-1-4244-8574-1
DOI :
10.1109/ASDAM.2010.5666357
