Predistortion linearization of GaN power amplifier in digital radio links

Author

Abuema´atti, Muhammad Taher ; Abuelmaatti, Abdullah M T ; Yeung, Tk

Author_Institution

Dept. of Electr. Eng., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia

fYear

2011

Firstpage

1

Lastpage

6

Abstract

This paper investigates the feasibility of using diode-based predistortion for linearizing GaN power amplifier used in digital radio links. The predistortion linearizer circuit is built around diodes and resistors and can be operated from a DC supply voltage as low as 1 V. The proposed linearized amplifier is tested using QPSK signals. The results shows an improved performance for output powers up to 36 dBm.

Keywords

III-V semiconductors; digital radio; gallium compounds; power amplifiers; quadrature phase shift keying; radio links; resistors; semiconductor diodes; DC supply voltage; GaN; Power Amplifier; QPSK signals; digital radio links; diode based predistortion; predistortion linearization; predistortion linearizer circuit; resistors; voltage 1 V; Microwave amplifiers; Microwave circuits; Power generation; Predistortion; Schottky diodes; digital modulation; linearization; power amplifiers; predistortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International

Conference_Location

Riyadh

Print_ISBN

978-1-4577-0068-2

Electronic_ISBN

978-1-4577-0067-5

Type

conf

DOI

10.1109/SIECPC.2011.5876894

Filename

5876894