Title :
Dielectric breakdown mechanism of HfSiON/SiO2 gate dielectric
Author :
Torii, Kentaro ; Aoyama, T. ; Kamiyama, S. ; Tamura, Y. ; Miyazaki, S. ; Kitajima, H. ; Arikado, T.
Author_Institution :
Semicond. Leading Edge Technol., Ibaraki, Japan
Abstract :
The breakdown mechanism of HfSiON/SiO2 gate stacks is discussed, based on studies of the band diagram, carrier separation and charge pumping measurements. We found that both holes and electrons contribute to BD and therefore the combination of the stress polarity and the device type should be chosen carefully to evaluate the reliability.
Keywords :
band structure; electric breakdown; hafnium compounds; integrated circuit reliability; interface states; silicon compounds; HfSiON-SiO2; HfSiON/SiO2 gate dielectric; band diagram; carrier separation; charge pumping measurements; dielectric breakdown mechanism; stress polarity; Breakdown voltage; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electron traps; Etching; Gate leakage; MOCVD; Paper technology; Stress;
Conference_Titel :
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN :
0-7803-8289-7
DOI :
10.1109/VLSIT.2004.1345423
